Related references
Note: Only part of the references are listed.Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability
Mohit Bajaj et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2016)
Theoretical investigation of the phonon-limited carrier mobility in (001) Si films
Jing Li et al.
JOURNAL OF APPLIED PHYSICS (2016)
Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach
Leo Bourdet et al.
JOURNAL OF APPLIED PHYSICS (2016)
Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ/SiO2 gate stacks
Y. M. Niquet et al.
APPLIED PHYSICS LETTERS (2015)
On the modeling of Coulomb scattering in p-MOSFETs with hafnium based metal gate stacks
A. Kuligk et al.
SOLID-STATE ELECTRONICS (2015)
Comparison of Random Dopant and Gate-Metal Workfunction Variability Between Junctionless and Conventional FinFETs
Sk Masum Nawaz et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Quantum Modeling of the Carrier Mobility in FDSOI Devices
Viet-Hung Nguyen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches
Yann-Michel Niquet et al.
JOURNAL OF APPLIED PHYSICS (2014)
On the Characteristics of Traps and Charges in the Si/SiO2/HfO2/TaN High-k Gate Stacks
Samares Kar
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2014)
Ab initio Study of Metal Grain Orientation-Dependent Work Function and its Impact on FinFET Variability
Samarth Agarwal et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks
P. Toniutti et al.
JOURNAL OF APPLIED PHYSICS (2012)
Ab initio study of the electrostatic dipole modulation due to cation substitution in HfO2/SiO2 interfaces
A. G. Van der Geest et al.
PHYSICAL REVIEW B (2012)
Atomic mechanism of electric dipole formed at high-K: SiO2 interface
L. Lin et al.
JOURNAL OF APPLIED PHYSICS (2011)
Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions
Yann-Michel Niquet et al.
PHYSICAL REVIEW B (2011)
Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors-Part I: Modeling, Analysis, and Experimental Validation
Hamed F. Dadgour et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Origin of electric dipoles formed at high-k/SiO2 interface
Koji Kita et al.
APPLIED PHYSICS LETTERS (2009)
A study on mobility degradation in nMOSFETs with HfO2 based gate oxide
G. Hyvert et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2009)
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
P. D. Kirsch et al.
APPLIED PHYSICS LETTERS (2008)
Remote phonon scattering in field-effect transistors with a high kappa insulating layer
B. Laikhtman et al.
JOURNAL OF APPLIED PHYSICS (2008)
Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation
K. Cherkaoui et al.
JOURNAL OF APPLIED PHYSICS (2008)
Modeling of nanoscale devices
M. P. Anantram et al.
PROCEEDINGS OF THE IEEE (2008)
Impact of a nonideal metal gate on surface optical phonon-limited mobility in high-κ gated MOSFETs
Raheel Shah et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Fermi level pinning by defects in HfO2-metal gate stacks
J. Robertson et al.
APPLIED PHYSICS LETTERS (2007)
The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs
A. A. Negara et al.
MICROELECTRONIC ENGINEERING (2007)
Theoretical study of the insulator/insulator interface: Band alignment at the SiO2/HfO2 junction
Onise Sharia et al.
PHYSICAL REVIEW B (2007)
Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics
P. D. Kirsch et al.
APPLIED PHYSICS LETTERS (2006)
Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks
Andrew R. Brown et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2006)
A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions
Seonghoon Jin et al.
JOURNAL OF APPLIED PHYSICS (2006)
Carrier transport in HfO2/metal gate MOSFETs:: Physical insight into critical parameters
M Cassé et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
High dielectric constant gate oxides for metal oxide Si transistors
J Robertson
REPORTS ON PROGRESS IN PHYSICS (2006)
Effects of ALD HfO2 thickness on charge trapping and mobility
JH Sim et al.
MICROELECTRONIC ENGINEERING (2005)
Infrared properties of ultrathin oxides on Si(100)
F Giustino et al.
MICROELECTRONIC ENGINEERING (2005)
Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs
D Esseni et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Concept of dielectric constant for nanosized systems
C Delerue et al.
PHYSICAL REVIEW B (2003)
Thermal response of MOCVD hafnium silicate
P Lysaght et al.
MICROELECTRONIC ENGINEERING (2003)
Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation
TQ Li et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2003)
Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs
D Esseni et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors
F Gámiz et al.
APPLIED PHYSICS LETTERS (2003)
Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator:: The role of remote phonon scattering
MV Fischetti et al.
JOURNAL OF APPLIED PHYSICS (2001)
Improvement of threshold voltage deviation in damascene metal gate transistors
A Yagishita et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)