Journal
JOURNAL OF APPLIED PHYSICS
Volume 122, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4991053
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Funding
- JSPS KAKENHI Grant [16H03832, 16H02389]
- ImPACT program of Council for Science, Technology and Innovation (Cabinet Office, Government of Japan)
- Photonics Advanced Research Center (PARC) at Osaka University
- Grants-in-Aid for Scientific Research [16H03832, 16H02389] Funding Source: KAKEN
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We report the magnetic field dependence of the threshold electric field Eth for the magnetoelectric switching of the perpendicular exchange bias in Pt/Co/Au/Cr2O3/Pt stacked films using a reversible isothermal electric tuning approach. The Eth values for the positive-to-negative and negative-topositive switching are different because of the unidirectional nature of the interfacial exchange coupling. The Eth values are inversely proportional to the magnetic-field strength, and the quantitative analysis of this relationship suggests that the switching is driven by the nucleation and growth of the antiferromagnetic domain. We also find that the magnetic-field dependence of Eth exhibits an offset electric field that might be related to the uncompensated antiferromagnetic moments located mainly at the interface. Published by AIP Publishing.
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