Journal
JOURNAL OF APPLIED PHYSICS
Volume 122, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4986646
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Funding
- ARPA-E SWITCHES program
- IBM
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Successful wafer-scale layer transfer from high-quality 2-in. diameter bulk gallium nitride substrates was demonstrated using the Controlled Spalling technique. The crystal quality of both the as-fractured bulk substrate and the spalled GaN film was assessed using transmission electron microscopy analysis, and the defect density was below the detection limit (mid 10(7) cm(-2)) for both samples. By using the experimentally determined critical conditions for tensile stress and thickness of the Ni stressor layer, an effective fracture toughness K-IC of 1.7MPa root m could be calculated for [0001] fracture using the Suo and Hutchinson mechanical model. The resulting in-plane contraction of the GaN film after spalling permitted a novel method for measuring film strain without knowledge of the elastic properties of the material. This was used to measure the Raman E-2(high) peak shift coefficient of Delta omega x(cm(-1)) = 1411 epsilon which, when converted to a stress coefficient (2.95 cm(-1)/GPa), was in agreement with only one other literature value. Published by AIP Publishing.
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