Anisotropic large magnetoresistance in TaTe4 single crystals

Strong anisotropic magnetotransport is reported in high-quality TaTe4 single crystals synthesized by flux methods. Large positive magnetoresistance (MR) and field-induced metal-semiconductor-like transition are observed at low temperatures with B perpendicular to c axis. The MR value reaches 3200% in 9 T at 2K with B parallel to a axis, contrast to 79% for B along c axis. Angle dependent magnetoresistance with B rotated within ab plane displays eightfold symmetry and pronounced Shubnikov-de Haas (SdH) oscillations at low temperatures. The analysis of angle dependent resistivity, Hall effect and observed SdH oscillations suggest the high mobile electron and anisotropic Fermi surface responsible for the large anisotropic MR in TaTe4. Published by AIP Publishing.