Journal
JOURNAL OF APPLIED PHYSICS
Volume 121, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4983254
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- Japan Science and Technology Agency (JST) Super Cluster Program
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We investigated both the atomic arrangements in the core structure of threading dislocations (TDs) and their behaviors in unintentionally doped c-plane-GaN layers grown by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy using high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The extra image contrast near the core was attributed to an extra displacement in a-type TDs in addition to the core structures revealed in previous reports; we used the notation with displacement to describe the new core structure. We found that TDs incline towards both the m-and a-directions from the c-direction. The transition of a-type TDs from the conventional core structure to the structure with displacement was deduced from its relationship to the TD inclination. We also found similarities between a-type screw dislocations and a-type TDs with displacement in the atomic-scale HAADF-STEM images. We concluded that a-type TDs could incline towards the a-direction via a-type screw dislocations, and that these inclined a-type TDs are observed as the core structure with displacement. Published by AIP Publishing.
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