Journal
RSC ADVANCES
Volume 10, Issue 27, Pages 16088-16093Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0ra00734j
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Funding
- Science Challenge Project [TZ2016001]
- National Natural Science Foundation of China [51861145306, 51872212, 51972244]
- 111 Project [B13035]
- Joint Fund of Ministry of Education for Pre-research of Equipment [6141A02022257]
- International Science & Technology Cooperation Program of China [2018YFE0103600, 2014DFA53090]
- Technological Innovation of Hubei Province, China [2019AAA030]
- Fundamental Research Funds for the Central Universities [WUT: 2018YS003, 2018YS016, 2019III030, 2019III028, SCU: YJ201893]
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (WUT) [2019-KF-12]
- State Key Lab of Advanced Metals and Materials, China [2019-Z03]
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Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu-Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu-Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 mu m min(-1) with the lateral size of h-BN being higher than 60 mu m. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.
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