Journal
PHYSICAL REVIEW B
Volume 101, Issue 13, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.101.134419
Keywords
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Funding
- NSF ERC-Translational Applications of Nanoscale Multiferroic Systems (TANMS) [1160504]
- US Army [W911NF-15-1-0066]
- NSF Partnership in Research and Education in Materials Grant [DMR-1828019]
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To date the realization of magnetoresistive random access memory (RAM) and magnetoelectric RAM (MeRAM) devices relies primarily on ultrathin ferromagnetic-based (FeCoB/MgO) magnetic tunnel junctions. On the other hand, the Heusler family of intermetallics is considered very promising for spintronic applications. Nevertheless, the voltage controlled magnetic anisotropy (VCMA) in ultrathin Heusler-based magnetic-tunnel junction stacks remains unexplored. Here, using the ferrimagnetic Heusler Mn3Ga as a prototype system, we report ab initio calculations of the electric field modulation of magnetism in the Ir/Mn3Ga/MgO heterostructure. The trilayer structures with one and three monolayer Ir caps and Mn-Mn termination exhibit large perpendicular magnetic anisotropy in contrast to those with Mn-Ga termination which yield in-plane magnetization orientation. We predict giant VCMA coefficients the magnitude and sign of which depend on both the interface termination and the Ir cap thickness. The underlying atomistic mechanism lies on the electric-field-induced shifts of the spin-orbit coupling energies of the spin-polarized Ir/d orbitals with different orbital angular momentum symmetries. Our paper paves the way for exploiting the unique magnetic properties of ferrimagnetic Heusler compounds for next generation MeRAM devices.
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