Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 718, Issue -, Pages 116-121Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.05.141
Keywords
SiCx:H/a-C:H hetero-multilayer films; PECVD; Silicon quantum dots; a-C:H layer
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Funding
- National Natural Science Foundation of China [61604087, 11374181]
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Silicon quantum dots (Si QDs) were grown in situ in SiCx:H/a-C:H hetero-multilayer films at a low substrate temperature using a radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) method. The component and bonding configuration of the SiCx:H/a-C:H hetero-multilayer films have been systematically investigated by Raman, FTIR and HRTEM testing techniques. The results show that there are amorphous Si QDs in SiCx:H/a-C:H hetero-multilayer films. Without high temperature post-deposition annealing treatments, as increasing CH4 flow rate, the coexistence of amorphous Si QDs and silicon nanocrystals in SiCx:H matrix layers has been confirmed by Raman, HRTEM and FTIR measurements. X-ray photoelectron spectroscopy and UV-Vis spectrometry measurements show that the a-C: H layer is mainly consisted of the sp2-bonded and sp3-bonded carbon atoms and its optical band gap is 1.63 eV. The smaller optical band gap suggested that SiCx:H/a-C:H hetero-multilayer films can reduce the barrier height between Si QDs and barrier layer in vertical direction as compared with SiCx/SiC multilayer films. (C) 2017 Elsevier B.V. All rights reserved.
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