Journal
ACS APPLIED ENERGY MATERIALS
Volume 3, Issue 3, Pages 2556-2564Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaem.9b02243
Keywords
single-walled carbon nanotubes; boron substitutional doping; thermoelectric measurements; ab initio stimulation; flexible thermoelectric applications
Funding
- European Union [604647]
- German Federal Ministry of Education and Research [031B0298]
- German Research Foundation (DFG) within the Cluster of Excellence Center for Advancing Electronics Dresden
- China Scholarship Council
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We report a detailed experimental and theoretical study on thermoelectric properties of boron-doped single-walled carbon nanotubes (B-SWCNTs), which are versatile building blocks of flexible thermoelectric devices. Implantations of substitutional boron dopants (0.1-0.5 atom %) in SWCNTs are realized using thermal diffusion. The after-synthesis boron doping simultaneously improves the Seebeck coefficient (S) and electrical conductivity (sigma) of SWCNT networks, leading to an S-2 sigma value of 226 mu W/mK(2). First-principle calculations indicate that a few tenths atom % of substitutional boron atoms improve the S value of semi-conducting SWCNTs but reduce the electron conductance in individual SWCNTs. The high s of B-SWCNT networks is attributed to the improved electrical transport between laterally contacted metallic and semi-conducting nanotubes. The produced B-SWCNTs are stable over high-temperature annealing or processing in liquid media, which inspired us to fabricate thermoelectric modules by a low-cost printing method. The modules demonstrate an increased thermoelectric efficiency by 76% compared to those with undoped SWCNTs. This work provides a feasible fabrication strategy and physical insights for B-SWCNT-based flexible thermoelectrics.
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