Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 726, Issue -, Pages 765-771Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.08.006
Keywords
Piezoelectricity; Heterojunction; GaN; Cu2O
Categories
Funding
- National Research Foundation of Korea Grant - Korean Government [NRF-2016R1A2B4008622]
- National Research Foundation of Korea [2016R1A2B4008622] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Typically, semiconductor piezoelectric-generators (PGs) exhibit low output potential because of the rapid screening by mobile carriers, and the output potential drops within fractions of a second. The reduction of internal carrier screening has been attempted by several groups, but complete suppression has not yet been reported. In this paper, a novel method for the fabrication of high-power PGs is presented. The detrimental screening issue was solved by fabricating a p-n heterojunction of p-type CuxO (x = 1, 2) and GaN. This was found to be an effective structure for decreasing the internal screening, while the suppression of screening was directly proportional to the resistivity of the p-type layer. The resistivity of the p-type thin film was controlled by optimizing the oxygen content in the environment during deposition. From X-ray diffraction analysis, the crystal structure of copper oxide changed by varying the oxygen incorporation, which primarily controlled the p-type conductivity. The optimized device exhibited output voltage of 26 V with a current density of 11.40 mu A cm(-2) under a pressure of 5 MPa. This study provides an effective approach for generating high electrical power, and it would be advantageous to construct flexible GaN PGs, which are essential devices for self-powered sensor networks. (C) 2017 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available