The luminescent properties and latent fingerprint identification application of AlN:Ce, Tb phosphors

Ce3+ and Tb3+ ion co-doped aluminum nitride (AlN) phosphors were prepared by a simple solid-state reaction. X-ray diffraction (XRD), high resolution transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS), as well as photoluminescence (PL) spectra were employed to analyze the samples. The crystal structure, morphology, photoluminescence properties and the energy transfer process of Ce3+ and Tb3+ ion co-doped AlN phosphors were carefully investigated. An enhanced light emission and red-shifted excitation wavelength can be observed in AlN: Tb phosphors after co-doped with Ce3+ ion. The results indicate that the Ce3+ and Tb3+ ion co-doped AlN phosphors can be effectively used in fingerprint identification. The phosphor-marked fingerprints on various substrates can be clearly manifested with good contrast and weak background inference, holding significant applications in the forensic field. (C) 2017 Elsevier B. V. All rights reserved.