4.7 Article

Double-Mesoscopic Hole-Transport-Material-Free Perovskite Solar Cells: Overcoming Charge-Transport Limitation by Sputtered Ultrathin Al2O3 Isolating Layer

Journal

ACS APPLIED NANO MATERIALS
Volume 3, Issue 3, Pages 2463-2471

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsanm.9b02563

Keywords

sputtering; Al2O3 space layer; interface recombination; perovskite solar cells; carbon-graphite; double-mesoscopic; HTM-free

Funding

  1. State Graduate Funding program of Baden-Wurttemberg (LGFG)
  2. German Federal Environment Foundation (DBU)
  3. Project PROPER - German Federal Ministry of Education and Research [01DR19007]
  4. ANR
  5. PtJ
  6. MIUR
  7. MINECO-AEI
  8. SWEA
  9. European Commission within the EU Framework Programme for Research and Innovation HORIZON 2020 (Cofund ERA-NET Action) [691664]
  10. European Union's Horizon 2020 research and innovation program [763989]

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The electrically insulating space layer takes a fundamental role in monolithic carbon-graphite based perovskite solar cells (PSCs) and it has been established to prevent the charge recombination of electrons at the mp-TiO2/carbon-graphite (CG) interface. Thick 1 mu m printed layers are commonly used for this purpose in the established triple-mesoscopic structures to avoid ohmic shunts and to achieve a high open circuit voltage. In this work, we have developed a reproducible large-area procedure to replace this thick space layer with an ultra-thin dense 40 nm sputtered Al2O3 which acts as a highly electrically insulating layer preventing ohmic shunts. Herewith, transport limitations related so far to the hole diffusion path length inside the thick mesoporous space layer have been omitted by concept. This will pave the way toward the development of next generation double-mesoscopic carbon-graphite-based PSCs with highest efficiencies. Scanning electron microscope, energy dispersive X-ray analysis, and atomic force microscopy measurements show the presence of a fully oxidized sputtered Al2O3 layer forming a pseudo-porous covering of the underlying mesoporous layer. The thickness has been finely tuned to achieve both electrical isolation and optimal infiltration of the perovskite solution allowing full percolation and crystallization. Photo voltage decay, light-dependent, and time-dependent photoluminescence measurements showed that the optimal 40 nm thick Al2O3 not only prevents ohmic shunts but also efficiently reduces the charge recombination at the mp-TiO2/CG interface and, at the same time, allows efficient hole diffusion through the perovskite crystals embedded in its pseudo-pores. Thus, a stable V-OC of 1 V using CH3NH3PbI3 perovskite has been achieved under full sun AM 1.5 G with a stabilized device performance of 12.1%.

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