Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 694, Issue -, Pages 168-174Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.09.313
Keywords
Mix-phaseMgZnO; Interfaces; Solar-blind; UV response
Categories
Funding
- National Natural Science Foundation of China [60976036, 51302174, 51371120, 61504083]
- Science and Technology Research Items of Shenzhen,Natural Science Foundation of SZU [201201, 201501, 000062]
- Items of Shenzhen Key Laboratory of Special Functional Materials [T201205, T201101, T201109]
- Public welfare capacity building in Guangdong Province [2015A010103016]
- Guangdong Research Center for Interfacial Engineering of Functional Materials
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MSM structure UV detectors were fabricated on mixed-phase MgZnO thin films with (200) cubic MgZnO/hexagonal, MgZnO and (111) cubic MgZnO/hexagonal MgZnO interfaces by PLD method. Under 25 V bias voltage, the maximum responsivity of the mix-phase MgZnO based detector with (002) cubic MgZnO/hexagonal MgZnO interfaces reached 8 A/W at 256 nm because of 3809% internal gain of the detector at solar-blind UV light, which is two order of magnitude bigger than the detector with (111) cubic MgZnO/hexagonal MgZnO interfaces. The higher density of interface states between (200) cubic and hexagonal MgZnO grains in the mix-phase MgZnO thin film is main reason for its big internal gain and high solar blind UV response. The I-dark of the mixed-phase MgZnO based detector with (111) cubic MgZnO/hexagonal MgZnO interfaces is much smaller and the I-ight/I-dark of which is higher because of the higher interfaces barrier at (111) cubic MgZnO/hexagonal MgZnO interfaces, so the detector could effectively detect faint solar-blind UV signal more under strong noise background. (C) 2016 Elsevier B.V. All rights reserved.
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