Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 712, Issue -, Pages 303-310Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.04.073
Keywords
Nanostructured materials; Oxide materials; Vapor deposition; Raman spectroscopy; Band gap; X-ray diffraction
Categories
Funding
- National Council of Science and Technology (CONACYT) Mexico
- laboratory of material analysis at the Universidad Tecnologica de Ciudad Juarez
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We investigate the effect of annealing temperature on the crystalline structure and physical properties of tantalum-pentoxide films grown by radio frequency magnetron sputtering. For this purpose, several tantalum films were deposited and the Ta2O5 crystalline phase was induced by exposing the samples to heat treatments in air in the temperature range from (575-1000)C-omicron. Coating characterization was performed using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-VIS spectroscopy. By X-ray diffraction analysis we found that a hexagonal Ta2O5 phase generates at temperatures above 675(omicron)C. As the annealing temperature raises, we observe peak sharpening and new peaks in the corresponding diffraction patterns indicating a possible structural transition from hexagonal to orthorhombic. The microstructure of the films starts with flake-like structures formed on the surface and evolves, as the temperature is further increased, to round grains. We found out that, according to the features exhibited in the corresponding spectra, Raman spectroscopy can be sensitive enough to discriminate between the orthorhombic and hexagonal phases of Ta2O5. Finally, as the films crystallize the magnitude of the optical band gap increases from 2.4 eV to the typical reported value of 3.8 eV. (C) 2017 Elsevier B.V. All rights reserved.
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