Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 8, Issue 11, Pages 3724-3729Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9tc05621a
Keywords
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2018R1A2B2003607, 2016R1D1A1B01009032]
- Ministry of Education [NRF-2018R1A6A1A03025340]
- National Research Foundation of Korea [22A20130012040, 2016R1D1A1B01009032] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The interplay between free and bound charges in two-dimensional (2D) semiconductor/ferroelectric oxide structures is responsible for the unique opto-electrical properties of these structures. In this study, we vertically combined the 2D layered semiconductors MoS2 (n-type) and WSe2 (p-type) with a ferroelectric oxide (PbTiO3) and found that a ferroelectric polarization induced accumulation or depletion in the layered materials. The heterostructures exhibited polarization-dependent charge distribution and pinched hysteresis. We show that polarization at the interface promoted efficient charge separation of photo-generated carriers in the 2D layers. Optical control of electrical transport was effectively achieved in the MoS2 layers. This study potentially opens up new applications for semiconductor/ferroelectric systems in electronic devices.
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