Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 8, Issue 1, Pages 350-357Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2020.2981627
Keywords
Germanium; Schottky junction; traps around junction interface; low temperature conductance method
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Funding
- NSFC-Zhejiang Joint Fund for the Integration of Industrialization Informatization [U1609213]
- National Science and Technology Major Project of the Ministry of Science and Technology of China [2017ZX02315001-007]
- Zhejiang Provincial Natural Science Foundation of China [LR18F040001]
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This paper proposes and develops a new technique based on low temperature conductance method to quantitatively evaluate the trap densities around NiGe/Ge Schottky junction interface and their time constants. It is found that the Schottky barrier height (SBH) in the NiGe/Ge junction is related with these junction traps. Additionally, the traps around junction interface could strongly affect the electrical properties of Ge MOSFETs, especially the OFF-state currents.
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