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Plasmonically enabled two-dimensional material-based optoelectronic devices

Journal

NANOSCALE
Volume 12, Issue 15, Pages 8095-8108

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c9nr10755j

Keywords

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Funding

  1. National Natural Science Foundation of China (NSFC) [U1930402]
  2. Hong Kong Research Grants Council (NSFC/RGC Joint Research Scheme) [N_CUHK408/18]

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Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides, black phosphorus and hexagonal boron nitride, have been intensively investigated as building blocks for optoelectronic devices in the past few years. Very recently, significant efforts have been devoted to the improvement of the optoelectronic performances of 2D materials, which are restricted by their intrinsically low light absorption due to the ultrathin thickness. Making use of the plasmonic effects of metal nanostructures and intrinsic plasmon excitation in graphene has been shown to be one of the promising strategies. In this minireview, recent progress in 2D material-based optoelectronics enabled by the plasmonic effects is highlighted. A perspective on more possibilities in plasmon-assisted 2D material-based optoelectronic applications will also be provided.

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