Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 22, Issue 10, Pages 5667-5672Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0cp00298d
Keywords
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Funding
- DFG [Graphene SPP 1459, SFB TRR 173 Spin+X]
- Max Planck Society
- Seventh Framework Program within the project MoQuas Molecular Quantum Spintronics [FET-ICT-2013-10 610449]
- Graphene Flagship
- Excellence Initiative by the Graduate School Materials Science in Mainz (GSC 266)
- MAINZ Graduate School of Excellence [GSC 266]
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Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the main origin of the hysteresis effect.
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