Journal
SUSTAINABLE ENERGY & FUELS
Volume 4, Issue 2, Pages 485-503Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9se00785g
Keywords
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Funding
- National Natural Science Foundation of China [11874081, 21703190]
- Science Technology and Innovation Committee of Shenzhen Municipality [JCYJ20170818104105891]
- Research Grants Council of the Hong Kong SAR [11305618]
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As an emerging star semiconductor for photoelectrochemical (PEC) cells, metal-free graphitic carbon nitride (g-CN) has generally attracted research attention from the community that develops inorganic semiconductor photoelectrodes due to its merits, namely an appropriate bandgap, abundant composition elements, good thermal stability and non-toxicity. The development of g-CN based photoelectrodes is still in its initial stage. The key step is to fabricate high-quality g-CN films, but this is restricted by limited production methods. Furthermore, pristine g-CN photoelectrodes exhibit low photocurrent density which cannot meet the demands of commercial application. Multiple modification strategies have been reported, including doping, monomer modification, cocatalysts and composite photoelectrodes, but a single modification method is unlikely to substantially improve the photocurrent density of g-CN photoelectrodes. Therefore, a multiple combination strategy may be an efficient approach. Hundreds of studies concerned with g-CN based PEC devices are reported each year, but there is a lack of comprehensive reviews to well summarize the research. It is imperative to provide researchers with a thorough understanding of the most recent progress in this field. In this review, we present the basic knowledge on PEC cells, our new perspective on the structure of g-CN, the achievements and deficiencies in the development of g-CN based photoelectrodes and some of our suggestions and new ideas about g-CN based films for PEC devices in the future.
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