High-Temperature Performance of a GaSe Nanosheet-Based Broadband Photodetector

We made a report on the fabrication and characterization of a mechanically exfoliated multilayered gallium selenide-based metal-semiconductor-metal (MSM) photodetector using Ti/Au as metal contacts. A significant increase in photocurrent was observed when the photodetector was illuminated with a 380 nm laser, giving the photoresponsivity, external quantum efficiency, and detectivity of 2.6 A/W, 850%, and 1.0 x 10(12) Jones, respectively, at a power density of 0.35 mW/cm(2) at room temperature. Experimentally, it was observed that the device shows high photoresponse in both UV and visible regions. The performance of this GaSe-based photodetector was also checked at various temperatures, ranging from room temperature to 120 degrees C. It was found that the detector was thermally stable, giving a maximum photoresponsivity of 4.5 A/W at 120 degrees C.