Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.030304
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Funding
- NSF DMREF [1534303]
- NSF NNCI [ECCS-1542081]
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Dry etching behavior of unintentionally-doped (201) beta-Ga2O3 has been studied in a BCl3/Ar chemistry using inductively-coupled-plasma reactive ion etching (ICP-RIE). The effects of various etch parameters like ICP and RIE powers, BCl3/Ar gas ratio and chamber pressure on etch rate are studied systematically. Higher ICP, RIE powers and lower pressure conditions are found to enhance the etch rate. A synergic etching mechanism between chemical and physical components is proposed and used to obtain fast Ga2O3 etch rates more than 160 nm/min, nearly-vertical sidewalls and smooth etched surfaces. The findings of this work will enable Ga2O3 vertical devices for power electronics. (c) 2017 The Japan Society of Applied Physics
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