Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.04CG01
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- ST Microelectronics
- Tours grant
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Deep traps in AlGaN/GaN Schottky barrier diodes have been investigated using deep level transient spectroscopy. It has been found that ion-assisted gate recess process leads to the formation of electron traps. The defects related to these traps are mainly located in the two-dimensional electron gas channel below the Schottky contact, meaning that the partial etching of the AlGaN layer produces damage on the top of the underlying GaN layer. The activation energies of the electron traps, extracted from the data, range between 0.28 and 0.41 eV. We believe that these center sare complexes linked with nitrogen vacancies which may behave as extended defects. (C) 2017 The Japan Society of Applied Physics
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