Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates

Phosphorus or aluminum ions were directly implanted into semi-insulating 4H-SiC substrates with no epitaxial layers to form n-or p-type layers, respectively, with doping densities in the range from 10(17) to 10(19)cm(-3). The electrical properties of these implanted layers annealed at 1650 degrees C were characterized by Hall effect measurements in the temperature range of 160-900 K. The electrical activation ratios of implanted dopants were 88-98%. The density of compensating defects was higher in Al+-implanted layers than in P+-implanted ones. The mobilities of the implanted layers were mostly comparable to those of epitaxial layers in the doping range investigated. (C) 2017 The Japan Society of Applied Physics