4.3 Article

Annealing effects on CsPbI3-based planar heterojunction perovskite solar cells formed by vacuum deposition method

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 4, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.04CS11

Keywords

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Funding

  1. Basic Research Grant of TEPCO Memorial Foundation
  2. 35th Research Grant of the Tonen General Sekiyu Foundation
  3. JSPS KAKENHI [16K05882]
  4. Grants-in-Aid for Scientific Research [16K17947, 16K05882] Funding Source: KAKEN

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Cesium iodide (CsI) is attracting attention as a substitute for organic materials such as CH3NH3I. In this work, we fabricated sequential-vacuum-deposited planar heterojunction (PHJ) cesium lead iodide (CsPbI3) perovskite solar cells with enhanced efficiencies by varying the annealing time (0.5, 1, 5, and 10 min). The effect of performance enhancement was investigated as a function of varying annealing time at 350 degrees C employing a hot plate. The best-performing device was obtained with an annealing time of 1 min, delivered photocurrent density (JSC) of 12.06 mA/cm(2), voltage (V-OC) of 0.71 V, and fill factor (FF) of 0.67, leading to a power conversion efficiency (PCE) of 5.71% at standard AM 1.5G solar illumination. (C) 2017 The Japan Society of Applied Physics

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