Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.04CH05
Keywords
-
Categories
Funding
- R&D on optical PLL device for receiving and monitoring optical signals, the Commissioned Research of National Institute of Information and Communication Technology (NICT), Japan
Ask authors/readers for more resources
Vertical pin structures of Ge photodiodes (PDs) integrated with Si optical waveguides are fabricated by depositing Ge epitaxial layers on Si-on-insulator (SOI) layers, and the performances of n(+)-Ge/i-Ge/p(+)-SOI PDs are compared with those of p(+)-Ge/i-Ge/n(+)-SOI PDs. Both types of PDs show responsivities as high as 1.0 A/W at 1.55 mu m, while the dark leakage current is different, which is consistent with previous reports on free-space PDs formed on bulk Si wafers. The dark current of the p(+)-Ge/i-Ge/n(+)-SOI PDs is higher by more than one order of magnitude. Taking into account the activation energies for dark current as well as the dependence on PD area, the dark current of the n(+)-Ge/i-Ge/p(+)-SOI PDs is dominated by the thermal generation of carriers via mid-gap defect levels in Ge, while for the p(+)-Ge/i-Ge/n(+)-SOI PDs, the dark current is ascribed to not only thermal generation but also other mechanisms such as locally formed conduction paths. (C) 2017 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available