Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.124001
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Funding
- Brain Korea 21 Plus Project
- Future Semiconductor Device Technology Development Program - MOTIE (Ministry of Trade, Industry Energy) [10067739]
- KSRC (Korea Semiconductor Research Consortium)
- National Research Foundation of Korea (NRF) - Korean Government [2013R1A1A2065339, 2016R1A5A1012966, 2016R1A6A3A01006588]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10067739] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2013R1A1A2065339, 2016R1A6A3A01006588] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, we investigated the effects of nanowire size on the current sensitivity of silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs). The changes in on-current (Ion) and resistance according to pH were measured in fabricated SiNW ISFETs of various lengths and widths. As a result, it was revealed that the sensitivity expressed as relative Ion change improves as the width decreases. Through technology computer-aided design (TCAD) simulation analysis, the width dependence on the relative Ion change can be explained by the observation that the target molecules located at the edge region along the channel width have a stronger effect on the sensitivity as the SiNW width is reduced. Additionally, the length dependence on the sensitivity can be understood in terms of the resistance ratio of the fixed parasitic resistance, including source/drain resistance, to the varying channel resistance as a function of channel length. (C) 2017 The Japan Society of Applied Physics
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