Journal
MATERIALS HORIZONS
Volume 7, Issue 6, Pages 1495-1518Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9mh02033k
Keywords
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Funding
- Science and Technology Development Fund, Macao SAR, China [007/2017/A1, 132/2017/A3]
- National Natural Science Foundation of China [61674050, 61874158, 61875138, 61435010, 6181101252]
- Outstanding Youth Project of Hebei Province [F2016201220]
- Outstanding Youth Cultivation Project of Hebei University [2015JQY01]
- Project of Science and Technology Activities for Overseas Researcher [CL201602]
- Project of Distinguished Young of Hebei Province [A2018201231]
- Support Program for the Top Young Talents of Hebei Province [70280011807]
- Training and Introduction of High-level Innovative Talents of Hebei University [801260201300]
- Hundred Persons Plan of Hebei Province [E2018050004, E2018050003]
- Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province [SLRC2019018]
- Science and Technology Innovation Commission of Shenzhen [KQTD2015032416270385, JCYJ20150625103619275, JCYJ20170811093453105]
- Science and Technology Project of Shenzhen [JCYJ20180508152903208]
- Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
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As promising non-volatile memory devices, memristors have received extensive attention since they can effectively mimic synapses and enable the fabrication of neuromorphic systems. In recent years, 2D materials have been widely used in memristors because of their unique advantages, which not only improve the performance of memristors, but also promote the applicability of memristors in flexible electronics, low-power high-temperature devices, neuromorphic computing, etc. In this review, we summarize the applications of 2D materials in fabricating memristors and their physical switching mechanisms. The challenges involved are discussed and the corresponding strategies are reviewed.
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