Journal
JOURNAL OF SEMICONDUCTORS
Volume 41, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/41/4/041606
Keywords
micro-LED; GaN; full-color display; transfer printing; color conversion
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Funding
- National Natural Science Foundation of China (NSFC) [61974031, 61705041, 61571135]
- Shanghai Sailing Program [17YF1429100]
- Shanghai Technical Standard Program [18DZ2206000]
- State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Funding [SKLIPR1607]
- National Key Research and Development Program of China [2017YFB0403603]
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Due to the excellent optoelectronic properties, fast response time, outstanding power efficiency and high stability, micro-LED plays an increasingly important role in the new generation of display technology compared with LCD and OLED display. This paper mainly introduces the preparation methods of the GaN-based micro-LED array, the optoelectronic characteristics, and several key technologies to achieve full-color display, such as transfer printing, color conversion by quantum dot and local strain engineering.
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