4.6 Article

Electrical switching of perpendicular magnetization in a single ferromagnetic layer

Journal

PHYSICAL REVIEW B
Volume 101, Issue 22, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.101.220402

Keywords

-

Funding

  1. Singapore National Research Foundation under CRP Award [NRF-CRP10-2012-02]
  2. Ministry of Education [MOE2018-T2-2-043, MOE2018-T2-1-019, R-284-000-196-114, MOE2019-T2-1-150, AMEIRG180022, A*STAR IAF-ICP 11801E0036]
  3. Alexander von Humboldt Foundation
  4. Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [TRR 173 268565370]
  5. Grant Agency of the Czech Republic [19-28375X, 19-18623Y]
  6. Institute of Physics of the Czech Academy of Sciences
  7. Max Planck Society through the Max Planck Partner Group Programme
  8. Ministry of Education, Youth and Sports from the Large Infrastructures for Research, Experimental Development and Innovations Project, IT4 Innovations National Supercomputing Center [LM2015070]

Ask authors/readers for more resources

We report on the efficient spin-orbit torque (SOT) switching in a single ferromagnetic layer induced by a new type of inversion asymmetry, the composition gradient. The SOT of 6- to 60-nm epitaxial FePt thin films with a L1(0) phase is investigated. The magnetization of the FePt single layer can be reversibly switched by applying electrical current with a moderate current density. Different from previously reported SOTs which either decreases with or does not change with the film thickness, the SOT in FePt increases with the film thickness. We found the SOT in FePt can be attributed to the composition gradient along the film normal direction. A linear correlation between the SOT and the composition gradient is observed. This Rapid Communication introduces a platform to engineer large SOTs for lower-power spintronics.

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