Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 2, Issue 5, Pages 1395-1401Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.0c00167
Keywords
resistive switching in CH3NH3PbI3; noncontact tunneling; scanning tunneling microscopy; iodide vacancies; defect migration
Funding
- JC Bose National Fellowship of SERB [SB/S2/JCB-001/2016]
- CSIR Fellowship [09/080(1107)/2019-EMR-I, 528223]
- DST INSPIRE Fellowship [IF 140158]
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We present resistive switching characteristics of methylammonium lead iodide (CH3NH3PbI3) films through a noncontact electrical poling process toward memristive applications. The noncontact nature of the poling process was induced with a scanning tunneling microscope tip, so that the formation of metal filaments could be ruled out. The perovskite films were seen to exhibit resistive switching upon application of a voltage pulse in the presence of a high-resistive state and a low-resistive state; the magnitude and the width of the voltage pulse were varied to deliberate on the parameters necessary to activate the switching phenomenon. Among the underlying mechanisms proposed so far, the formation and the subsequent rupture of metal-like filaments because of the migration of iodide vacancies have been identified to be responsible for resistive switching in the perovskite material.
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