Journal
INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS
Volume 66, Issue -, Pages 116-121Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ijrmhm.2017.03.003
Keywords
Slab shape; Phosphorus doping; HPHT; n-Type semiconductors
Funding
- National Science Foundation of China [11604246]
- China Postdoctoral Science Foundation Education [2016M592714]
- Education Department of Henan Province, China [12A430010, 17A430020]
- Professional practice demonstration base for professional degree graduate in Material engineering of Henan Polytechnic University [2016YJD03]
- Fundamental Research Funds for the Universities of Henan Province [NSFRF140110]
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This paper reported the synthesis of slab shape diamond crystals with phosphorus doping from FeNiMnCo-C system in cubic anvil high pressure apparatus (SPD-6 x 1200) at 5.6 GPa and 1250-1320 degrees C. It was attributed to the presence of additive phosphorus that the temperature region of synthetic sheet cubic diamond increases evidently. With the increase of phosphorus content, the surfaces of the slab shape diamond crystals became rough. The results of Raman spectroscopy indicated that the diamonds doped by more phosphorous have more crystal defects and impurities. Furthermore, the electrical properties of the large diamond crystals were tested by a four point probe and the Hall Effect method. It was shown that the large single crystal samples were n-type semiconductors. This work enriches the application of the slab large diamond crystals. (C) 2017 Elsevier Ltd. All rights reserved.
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