Journal
MATTER
Volume 2, Issue 6, Pages 1582-1593Publisher
CELL PRESS
DOI: 10.1016/j.matt.2020.04.001
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Funding
- National Natural Science Foundation of China [51602013, 11804016, 61627813]
- Young Elite Scientists Sponsorship Program by China Association for Science and Technology [2018QNRC001]
- International Collaboration 111 Project [B16001]
- Fundamental Research Funds for the Central Universities of China
- Beijing Advanced Innovation Centre for Big Data and Brain Computing
- French PIA project Lorraine Universite d'Excellence [ANR-15-IDEX-0004]
- ICEEL
- Feder EU
- Agence Nationale de la Recherche (ANR) [ANR-15-IDEX-0004] Funding Source: Agence Nationale de la Recherche (ANR)
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Modulation of electronic properties in spintronic interfaces (spinter-faces) can give rise to the optimization and even emergence of abundant spintronic effects. However, a proof-of-concept demonstration of such a strategy has rarely been achieved. In this paper, we study the interlayer exchange coupling effect in a synthetic magnetic multilayer system [Pt/Co](2)/VO2/[Co/Pt](2), where atomically thin phase-change material VO2 is adopted as a spinterface with reversible metal-to-insulator transition. Repeatable switching from anti-ferromagnetic coupling through insulating spinterface to ferromagnetic coupling through metallic spinterface is observed in this multilayer system. Further analyses indicate that such an evolution originates from two distinct coupling mechanisms of spin-dependent tunneling and Rudermann-Kittel-Kasuya-Yosida interaction determined by the electronic states of VO2. As an experimental demonstration of VO2-tailored interlayer exchange coupling effect, this work highlights the great potential of spinterface as a magic building block in beyond-CMOS electronic devices.
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