Journal
IEEE ACCESS
Volume 8, Issue -, Pages 106346-106353Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2020.3000217
Keywords
Perovskite; defect tolerance; shallow level defect; deep level defect; SCAPS-1D
Categories
Funding
- National University of Malaysia [LRGS/1/2019/UKM-UKM/6/1]
- Bangabandhu Fellowship Trust (BBFT), Bangladesh
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Controlling the defect in the perovskite absorber layer is a very crucial issue for developing highly efficient and stable perovskite solar cells (PSCs) as it exhibits the existence of unavoidable defects even after the careful fabrication process. In this study, the presence of defects in the perovskite layer has been evaluated through the analysis of its structural and optical properties. Then the investigations on the impact of defect density on perovskite absorber layer and its associated solar cell parameters have been carried out by numerical simulation utilizing SCAPS-1D software. Besides the defect density, the thickness of the absorber layer has also been varied to find optimum values of cell parameters. It has been found that when the thickness of absorber and shallow defect density is increased from 200 nm to 800 nm and 1 x 10(13) cm(-3) to 1 x 10(18) cm(-3) respectively, power conversion efficiency (PCE) is varied from 26.7% to 0.90%. However, when the thickness and deep defect density are raised from 200 nm to 800 nm and 1 x 10(13) cm(-3) to 1 x 10(16) cm(-3), respectively, the PCE is varied from 19.3% to 6.15%. It is revealed that optimum absorber thickness is 550 nm and the tolerances of shallow level and deep level defect density are 1 x 10(17) cm(-3) and 1 x 10(15) cm(-3), respectively.
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