Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 19, Issue -, Pages 439-445Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2020.2998840
Keywords
Aluminum gallium nitride; Wide band gap semiconductors; Gallium nitride; HEMTs; MODFETs; Charge carrier density; Doping; Tri-gate; FinFETs; multi-channels; power ampli-fiers; high transconductance
Categories
Funding
- Ministry of Science and Technology, Taiwan [MOST 108-2628-E-002-010-MY3, MOST 108-2622-8-002-016]
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In this work, the design of multi-channels tri-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) is optimized for high-power and high-frequency applications. With a full self-consistent 3D modeling on carrier transport and heating issues, the optimized design of multi-channel AlGaN/GaN layer thickness, modulation doping of channel layer, and fin width are investigated and the influences of self-heating effects had been studied. After a proper design, the performance of experimental work can be further improved. The optimized enhance mode FinFET with four channels shows a 3.2 times higher maximum transconductance compared to the single channel tri-gate device. And the performance of unit current gain frequency also has an improvement in multi-channel FinFETs.
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