Journal
RSC ADVANCES
Volume 10, Issue 36, Pages 21129-21135Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0ra02699a
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Funding
- JST CREST [JPMJCR19Q4]
- Mirai [JPMJMI19A1]
- JSPS [JP16H06441]
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In the present study, we have focused on the elaboration of control of Te-doped CoSb(3)thin films by RF magnetron sputtering which is an attractive technique for industrial development of thermoelectric (TE) thin films. We have successfully synthesized sputtering targets with a reliable approach in order to obtain high-quality films with controlled stoichiometry. TE properties were then probed and revealed a reliable n-type behavior characterized by poor electrical transport properties. Tellurium substitution was realized by co-sputtering deposition and allowed obtaining a significant enhancement of the power factor with promising values of PF approximate to 0.21 mW m(-1)K(-2)near room temperature. It is related to the Te doping effect which leads to an increase of the Seebeck coefficient and the electrical conductivity simultaneously. However, despite this large improvement, the properties remained far from the bulk material and further developments are necessary to improve the carrier mobility reduced by the thin film formatting.
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