Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 7, Pages 1122-1125Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2999258
Keywords
Two-dimensional transition metal dichalcogenide(TMD); field-effect transistor (FET); Schottky barrier (SB); tungsten diselenide (WSe2)
Categories
Funding
- NEWLIMITS, a center in nCORE, a Semiconductor Research Corporation (SRC) program - NIST [70NANB17H041]
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Direct evidence of O-2-plasma induced contact metal Fermi-level realignment is observed in WSe(2 )based SB field-effect transistors (FETs), leading to high hole currents with on/off ratios >10(8). The formation of tungsten oxide (WOx) converted from top WSe2 layers not only serves as an effective p-type dopant, but also unpins the Fermi-level of the metal contacts. The phenomena are corroborated by significant threshold voltage shifts, improved hole currents and suppression of the electron branch, observed from our statistical device characteristics. In addition, channel thickness dependence is investigated with the observation of complete suppression of the electron branch in thin WSe2 (<4.9nm) devices after the O-2-plasma treatment, which is interpreted as more substantial increase of SB height to the conduction band of larger bandgaps. Excellent air-stability is also concluded from statistical device results, suggesting a robust p-doping approach for WSe2 through O-2-plasma treatment.
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