Journal
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
Volume 31, Issue 25, Pages -Publisher
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0217979217450229
Keywords
Heterojunction; rectifying characteristics; tunable magnetoresistance; manganite
Funding
- National Key Project for Basic Research [2014CB921002]
- National Natural Science Foundation of China [11374225, 11304285, 11574227, 11504432]
- Research Grant Council of Hong Kong [HKU 701813]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Key Lab. for Low Dimension Photoelectric Materials and Devices of Suzhou
- Cooperative Innovation Center of USTS
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La0.9Hf0.1MnO3 films were grown on 0.05 wt.% Nb-doped SrTiO3 substrates by pulsed laser deposition. X-ray diffraction measurements demonstrated that our samples were of good epitaxy and single-crystal. The temperature-dependent resistance has been investigated. It was observed that the as-grown film of La0.9Hf0.1MnO3 exhibited a typical paramagnetic-ferromagnetic transition. Heterojunctions of La0.9Hf0.1 MnO3/0.05 wt.% Nb-doped SrTiO3 exhibited-asymmetric current voltage characteristics and a remarkable temperature-dependent rectifying behavior in a wide temperature range (from 40 K to 300 K). And the most remarkable observation of this work is the existence of a crossover from positive to negative magnetoresistance in the La0.9Hf0.1MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction as the temperature decreases. A temperature-dependent magnetoresistance was studied as well. The rectifying characteristics and tunable magnetoresistance of these heterojunctions may be attributed to band structure of La0.9Hf0.1MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction.
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