Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 2, Issue 2, Pages 580-589Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.9b00810
Keywords
macro-/mesoporous films; ZnO; optoelectronic gas sensing; NO2; room temperature
Funding
- National Natural Science Foundation of China [51802123, 51522405, 51864030]
- Natural Science Foundation of Jiangsu Province [BK20180630]
- Scientific Research Fund of Yunnan Education Department [2019J0034]
- Scientific Research Fund of Kunming University of Science and Technology [KKSY201732033, KKZ3201752046]
- Fundamental Research Funds for the Central Universities [JUSRP11816]
- Analysis and Testing Foundation of Kunming University of Science and Technology [2018T20110222]
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UV illumination has been demonstrated as an effective approach to realize high-performance gas sensors operating at room temperature. Here, a macro-/mesoporous film structure design was presented for optoelectronic NO2 gas sensors exhibiting high response, fast sensing, full reversibility, and a subppb detection limit. We developed a rapid (<= 120 s), microwave-assisted, precursor self-sacrificing templated synthesis of macro-/mesoporous ZnO films composed of hierarchically networked nanorods. Compared to dense nanorod film, the device based on macro-/mesoporous ZnO films exhibited significantly improved optoelectronic and gas sensing performances at the ppb level of NO2 under UV irradiation. The optimal sensor responses to 2.5-1000 ppb NO2 range from 6.6% to 2900% at room temperature, and the response and recovery time was 19 and 32 s, respectively (to 400 ppb NO2). Furthermore, the sensor showed full reversibility, a sub-ppb detection limit (0.2 ppb), and high selectivity to NO2. The excellent optoelectronic property and UV-activated NO2 sensing performance were due to the hierarchically macro-/mesoporous structure which facilitated the efficient penetration and scattering of UV light within the film, as well as the enhanced diffusion and adsorption of gas molecules. These findings demonstrate a high-performance sensing film structure as well as a low-cost fabrication technology, which could also be employed to other semiconductors for optoelectronic devices.
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