Journal
EPJ PHOTOVOLTAICS
Volume 11, Issue -, Pages -Publisher
EDP SCIENCES S A
DOI: 10.1051/epjpv/2020004
Keywords
Hole blocking layer; TiO2; surface recombination velocity; transient reverse recovery
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Funding
- Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- Takahashi Industrial and Economic Research Foundation
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The junction properties at the solution-processed titanium dioxide (TiO2)/n-type crystalline Si(n-Si) interface were studied for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/n-Si heterojunction solar cells by the steady-state photovoltaic performance and transient reverse recovery characterizations. The power conversion efficiency could be increased from 11.23% to 13.08% by adjusting the layer thickness of TiO(2)together with increasing open-circuit voltage and suppressed dark saturation current density. These findings originate from the enhancement of the carrier collection efficiency at the n-Si/cathode interface. The transient reverse recovery characterization revealed that the surface recombination velocitySwas similar to 375 cm/s for double TiO(2)interlayer of similar to 2 nm thickness. This value was almost the same as that determined by microwave photoconductance decay measurement. These findings suggest that solution-processed TiO(2)has potential as a hole blocking layer for the crystalline Si photovoltaics.
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