Journal
PHYSICAL REVIEW B
Volume 102, Issue 1, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.102.014313
Keywords
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Funding
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division
- Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
- Singapore Ministry of Education Academic Research Fund Tier 1 FRC Project FY2016
- DOE Science Graduate Research Award Program (2018 Solicitation 2)
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Measurements and first-principles calculations probe the temperature-dependent thermal conductivity (k) of GaN films with large densities of highly oriented dislocations. We demonstrate that phonon-dislocation scattering is weaker than suggested by previous measurements, likely due to sample and experiment size effects. Nonetheless, dislocation-limited k is observed in samples with large dislocation densities and at lower temperatures where k anisotropy is also observed. Combination of experiment and theory give insights into the interplay of thermal resistance mechanisms limiting GaN functionalities and suggest pathways for tuning k via defect engineering.
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