Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 8, Issue 29, Pages 14822-14828Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0ta04644b
Keywords
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Funding
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [392228380]
- ERC [742068]
- National Natural Science Foundation of China [51761135127]
- Spanish Ministry of Economy and Competitivity [MAT2017-84496-R]
- European Union [839821]
- Alexander von Humboldt Stiftung
- Deutsche Forschungsgemeinschaft [BA 4171/4-1]
- Marie Curie Actions (MSCA) [839821] Funding Source: Marie Curie Actions (MSCA)
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Half-Heusler compounds with a valence electron count of 18, including ZrNiSn, ZrCoSb, and NbFeSb, are good thermoelectric materials owing to favorable electronic structures. Previous computational studies had predicted a high electrical power factor in another half-Heusler compound NbCoSn, but it has not been extensively investigated experimentally. Herein, the synthesis, structural characterization, and thermoelectric properties of the heavy-element Pt-substituted NbCoSn compounds are reported. Pt is found to be an effective substitute enabling the optimization of electrical power factor and simultaneously leading to a strong point defect scattering of phonons and the suppression of lattice thermal conductivity. Post-annealing significantly improves the carrier mobility, which is ascribed to the decreased grain boundary scattering of electrons. As a result, a maximum power factor of similar to 3.4 mW m(-1)K(-2)is obtained at 600 K. In conjunction with the reduced lattice thermal conductivity, a maximum figure of meritzTof similar to 0.6 is achieved at 773 K for the post-annealed NbCo0.95Pt0.05Sn, an increase of 100% compared to that of NbCoSn. This work highlights the important roles that the dopant element and microstructure play in the thermoelectric properties of half-Heusler compounds.
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