Journal
INFOMAT
Volume 2, Issue 4, Pages 735-742Publisher
WILEY
DOI: 10.1002/inf2.12087
Keywords
carrierless wafers; flexible electronics; integrated circuits; ultrathin silicon
Categories
Ask authors/readers for more resources
Double-sided metal-oxide-semiconductor field-effect-transistor processing is demonstrated for the first time on an ultrathin crystalline silicon substrate of 6-20 mu m in a 100 mm diameter wafer format without a carrier wafer, the thinnest freestanding silicon wafers ever fabricated. The compatibility of the flexible material with conventional semiconductor processing tools is enabled by supporting an interior ultrathin silicon with a surrounding thicker ring of silicon. Current-voltage characteristics of transistors on ultrathin silicon show performance as expected from bulk silicon, with electron mobility similar to 1500 cm(2) V-1 second(-1). Mechanical measurements quantify the handleability.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available