Double-sided transistor device processability of carrierless ultrathin silicon wafers

Double-sided metal-oxide-semiconductor field-effect-transistor processing is demonstrated for the first time on an ultrathin crystalline silicon substrate of 6-20 mu m in a 100 mm diameter wafer format without a carrier wafer, the thinnest freestanding silicon wafers ever fabricated. The compatibility of the flexible material with conventional semiconductor processing tools is enabled by supporting an interior ultrathin silicon with a surrounding thicker ring of silicon. Current-voltage characteristics of transistors on ultrathin silicon show performance as expected from bulk silicon, with electron mobility similar to 1500 cm(2) V-1 second(-1). Mechanical measurements quantify the handleability.