Ga2O3 Thin Films by Sol-Gel Method and its Optical Properties

Gallium (III) oxid Ga2O3 is emerging in the field of wide bandgap semiconductor for various applications such as solar-blind photodetectors et al. because of its wide bandgap. For this reason, the optical properties of Ga2O3 by sol-gel method are analyzed Ga2O3 thin films are prepared by spin coating method. The annealing temperature to make alpha-Ga2O3 is in the range of 450 degrees C-550 degrees C, where after 550 degrees C, beta-Ga2O3 is obtained as reported in reviewed works. Therefore, annealing temperatures of samples are set at 500 degrees C, 700 degrees C and 900 degrees C. X-ray diffraction is performed to characterize the structure of the sample. The optical bandgap of Ga2O3 is calculated based on the transmittance value measured from UV-Visible spectrophotometer, which range from 4.8eV to 5.0eV.