Journal
MATERIALS RESEARCH BULLETIN
Volume 131, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2020.110973
Keywords
Black silicon; Reactive ion etching (RIE); Room temperature; FDTD simulation; Light trapping
Categories
Funding
- Thales Land and Air Systems
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Black Silicon (BS) nanostructures fabricated by Reactive Ion Etching at Room Temperature (RT-RIE) are presented. We discuss the influence of the plasma process parameters on the silicon etching and their influence on the shape of the nanostructures constituting the BS. Furthermore, we study - both experimentally and using modeling by finite difference time domain (FDTD) method - how to increase absorptance in the visible and NIR regions using light trapping effect based on a fine control of the BS morphology. Absorptance higher than 99 % is reached with a strong angular acceptance. This paper proposes an optimized process to fabricate high aspect ratio and high absorptance BS using a room temperature process.
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