4.0 Article

Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation

Journal

NANO EXPRESS
Volume 1, Issue 2, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/2632-959X/aba7f1

Keywords

nanowires; surface passivation; EELS spectroscopy; GaAs; transmission electron microscopy; micro-photoluminescence; nitrogen plasma

Funding

  1. CPER MMASYF of Region Auvergne-Rhone Alpes
  2. Region Auvergne Rhone-Alpes [17 011236 01-61617]
  3. program 'Investissements d'avenir' of the French ANR agency, the French government IDEX-SITE initiative [16-muIDEX-0001 (CAP20-25)]
  4. European Commission (Auvergne FEDER Funds)
  5. Region Auvergne [ANR-10-LABX-16-01]
  6. Russian Science Foundation [19-72-30004]
  7. Natural Sciences and Engineering Research Council of Canada

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The structural and optical properties of individual ultra-long GaAs nanowires (NWs) were studied after different nitrogen passivation process conditions. The surface morphology of the NWs after passivation was characterized by high resolution transmission electron microscopy (HRTEM) and high angle annular dark field (HAADF) imaging. Electron energy loss spectroscopy (EELS) confirmed the presence of nitrogen on the NW surface. Micro-photoluminescence (mu-PL) on single NWs indicated an increase of the luminescence intensity upon passivation. This work reveals the efficacy of a plasma passivation process on complex nanometer-scale morphologies.

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