Journal
CHINESE JOURNAL OF CATALYSIS
Volume 41, Issue 9, Pages 1430-1438Publisher
ELSEVIER
DOI: 10.1016/S1872-2067(20)63612-9
Keywords
BiOCl; Carbon doping; Bi quantum dot; Photocatalysis; Reaction mechanism
Funding
- National Natural Science Foundation of China [21822601, 21777011]
- Fundamental Research Funds for the Central Universities [ZYGX2019Z021, 2672018ZYGX2018J088]
- Plan for National Youth Talents of the Organization Department of the Central Committee
- 111 Project [B20030]
- Key R&D Program from Department of Science and Technology of Sichuan Province [2019YFG0319]
Ask authors/readers for more resources
The simultaneous integration of heteroatom doping and surface plasmon resonance (SPR) modulation on semiconductor photocatalysts could be capable of improving visible light utilization and charge separation, achieving better solar light conversion and photocatalysis efficiency. For this purpose, we have designed a novel Bi quantum dots (QDs) implanted C-doped BiOCl photocatalyst (C/BOC/B) for NOx removal. The feasibility was firstly evaluated through density functional theory (DFT) calculations methods, which indicates that the enhanced photocatalytic performance could be expected owing to the synergistic effects of doped C heteroatoms and loaded Bi QDs. Then, the C/BOC/B was synthesized via a facile hydrothermal method and exhibited efficient and stable visible light photocatalytic NO removal. The results found that the doped C atoms can serve as electron guides to induce oriented charge transfer from Bi QDs to BiOCl, while the Bi QDs can act as light-capture and electron-donating sites. The reaction pathway and mechanism for NO conversion was unveiled by in situ Fourier-transform infrared spectroscopy combined with DFT calculation. The enhanced adsorption of reactants and intermediates could promote the overall reaction efficiency and selectivity in photocatalytic NO conversion. This work could provide a new perspective on the mechanistic understanding of the synergistic effects toward non-metal doping and SPR effects in semiconductor photocatalysts, and this presented technique could be extended for other semiconductor materials. (c) 2020, Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available