Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 19, Issue -, Pages 571-574Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2020.3007732
Keywords
GaN epilayer on (001)Si; InGaN QD on (001)Si; coalesced GaN NW template on (001) Si
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Funding
- University of Michigan College of Engineering Blue Sky Research Program
- Rackham Merit Fellowship
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We have investigated the structural and optical characteristics of planar GaN epitaxial layers on silicon substrates, formed by coalescing an array of GaN nanowires, and of In0.32Ga0.68N/GaN self-organized quantum dots grown on the GaN layer. The as-grown coalesced GaN layer is of the cubic crystalline form, with a large density of stacking faults, that transforms to the wurtzite form, devoid of most of the stacking faults, upon post-growth annealing. Multiple layers of the quantum dots emit at 550 nm. Temperature-dependent and time-resolved photoluminescence measurements have been made to determine the temperature dependent radiative and non-radiative lifetimes of the quantum dots.
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