Journal
APPLIED SURFACE SCIENCE
Volume 530, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2020.147194
Keywords
Ferroelectric thin film; BiFeO3; Remanent polarization; Bandgap; Photovoltaic properties
Categories
Funding
- National Key R&D Program of China [2019YFB1503500]
- National Natural Science Foundation of China [11774082, 51872079, 61874040, 11975093]
- Natural Science Foundation of Hubei Province [2019CFA006, 2018CFB700]
- Program for Science and Technology Innovation Team in Colleges of Hubei Province [T201901]
- Wuhan Application Foundation Frontier Project [2018010401011287]
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology) [2018-KF-16]
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In this work, we proposed modification of BiFeO3 (BFO) by Mn and Ca co-doping, and realized the epitaxial growth of Bi0.98Ca0.02Fe0.95Mn0.05O3 (BCFMO) thin films on (1 0 0)-oriented SrTiO3 (STO) substrates with a SrRuO3 (SRO) buffer layer via pulsed laser deposition (PLD). A decreased bandgap (Eg = 2.41 eV) and enhanced remanent polarization (P-r = 92.5 mu C/cm(2)) were simultaneously achieved in the BCFMO thin film. A tunable photovoltaic (PV) effect by changing the direction of the poling electric field was observed in the BCFMO-based device. We investigated the PV mechanism for the device by analyzing its band structure and attribute it to the coupling effects of the ferroelectric depolarization field and the interface Schottky barriers. The BCFMO-based device under favorable upward poling shows the best PV performance with an open-circuit voltage (V-oc) of - 0.29 V and short-circuit current density (J(sc)) of 0.26 mA/cm(2), which are much higher than those for the BFO-based device (V-oc = -0.11 V, J(sc) = 0.08 mA/cm(2)), resulting from the narrower bandgap and larger P-r in the BCFMO film. The approach of simultaneously introducing Ca and Mn into the BFO, enabling both a higher polarization and narrower bandgap, opens a new way for improving the performance of BFO-based PV devices.
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