Journal
INORGANIC CHEMISTRY
Volume 56, Issue 6, Pages 3709-3712Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.inorgchem.7b00232
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Funding
- CREST
- Japan Science and Technology Agency (JST)
- New Energy and Industrial Technology Development Organization (NEDO) through the Thermal Management Materials and Technology Research Association (TherMAT)
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As-based Zintl compounds Bai(1-x)K(x)Zn(2)As(2) were prepared by solidstate reaction followed by hot pressing. Bai(1-x)K(x)Zn(2)As(2) (x < 0.02) crystallizes in the alpha-BaCu2S2-type structure (space group Pnma) upon cooling from 900 degrees C, whereas it crystallizes in the ThCr2Si2-type structure (space group 14/mmm) for x >= 0.04. The lattice thermal conductivities are almost equivalent for both crystal structures with relatively low values of 0.8-1.1 W/mK at 773 K. The values are comparable to those of Sb-based Zintl compounds, though Bai(1-x)K(x)Zn(2)As(2) consists.of As atoms, which are lighter than Sb atoms. The electrical resistivity and Seebeck coefficient decreases with increasing x, indicating successful hole doping by K substitution. The dimensionless figure-of-merit ZT is 0.67 at 900 K for x = 0.02, opening a new class of thermoelectric materials with the As-based 122 Zintl compounds.
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