Journal
INTERNATIONAL JOURNAL OF SMART AND NANO MATERIALS
Volume 11, Issue 3, Pages 298-309Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/19475411.2020.1815132
Keywords
Magnetization reversal; nanoheterostructure; electric field; spintronics; multiscale simulations; switching probability
Categories
Funding
- National Natural Science Foundation of China [NSFC 11902150]
- German Science Foundation [DFG YI 165/1-1, DFG XU 121/7-1]
- 15th Thousand Youth Talents Program of China
- Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures [MCMS-I-0419G01]
- Science and Technology Innovation Project for Returned Overseas Scholars in Nanjing
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Lichtenberg High Performance Computer of TU Darmstadt
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Electric-field control of magnetization reversal is promising for low-power spintronics. Here in a magnet/insulator nanoheterostructure which is the fundamental unit of magnetic tunneling junction in spintronics, we demonstrate the electric field induced 180magnetization switching through a multiscale study combining first-principles calculations and finite-temperature magnetization dynamics. In the model nanoheterostructure MgO/Fe/Cu with insulator MgO, soft nanomagnet Fe and capping layer Cu, through first-principles calculations we find its magnetocrystalline anisotropy linearly varying with the electric field. Using finite-temperature magnetization dynamics which is informed by the first-principles results, we disclose that a room-temperature 180magnetization switching with switching probability higher than 90% is achievable by controlling the electric-field pulse and the nanoheterostructure size. The 180switching could be fast realized within 5 ns. This study is useful for the design of low-power, fast, and miniaturized nanoscale electric-field-controlled spintronics.
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